Share
Integrated Electronics on Aluminum Nitride: Materials and Devices
Reet Chaudhuri
(Author)
·
Springer
· Hardcover
Integrated Electronics on Aluminum Nitride: Materials and Devices - Chaudhuri, Reet
Choose the list to add your product or create one New List
✓ Product added successfully to the Wishlist.
Go to My Wishlists
Origin: U.S.A.
(Import costs included in the price)
It will be shipped from our warehouse between
Tuesday, June 25 and
Thursday, July 11.
You will receive it anywhere in United Kingdom between 1 and 3 business days after shipment.
Synopsis "Integrated Electronics on Aluminum Nitride: Materials and Devices"
Chapter 1. Introduction.- Chapter 2. Polarization-induced 2D Hole Gases in undoped (In)GaN/AlN Heterostructures.- Chapter 3. GHz-speed GaN/AlN p-channel Heterojunction Field Effect Transistors.- Chapter 4. Polarization-induced 2D Electron and Holes in undoped AlN/GaN/AlN Heterostructures.- Chapter 5. AlN/GaN/AlN High Electron Mobility Transistors.- Chapter 6. Integrated RF Electronics on the AlN Platform.
- 0% (0)
- 0% (0)
- 0% (0)
- 0% (0)
- 0% (0)
All books in our catalog are Original.
The book is written in English.
The binding of this edition is Hardcover.
✓ Producto agregado correctamente al carro, Ir a Pagar.
